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| On-Region Characteristics. VGS= -4.5V -3.5V -3.0V -2.5V On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), Normrlized Drain-source on-resistance 2 VGS= -2.0V 15 ID, Drain current(A) 12 1.8 1.6 -2.5V 9 -2.0V 1.4 -3.0V 6 1.2 1 0.8 -3.5V -4.5V 3 -1.5V 0 0 1 2 3 4 0 3 6 9 12 15 -VGS, Drain to Source Voltage(V) -ID, Drain Current(A) On-Resistance Variation with Temperature. RDS(ON), Normalized Drain-source on-resistance 1.4 ID= -4A VGS= -4.5V On-Resistance Variation with Gate-to-Source Voltage. 0.22 ) 1.2 1.1 1 0.9 0.8 0.7 -50 RDS(ON), On-resistance( 1.3 0.18 ID= -2A 0.14 0.1 TA= 125C TA= 25C 0.06 0.02 -25 0 25 50 75 100 125 150 1 2 3 4 5 TJ, Junction Temperature(C) -VGS, Gate to Source Voltage(V) Transfer Characteristics. Is, Reverse Drain Current (A) 10 VDS= -5V TA= -55C 25C 125C 10 Body Diode Forword Voltage Variation with Source Current and Temperature. VGS= 0V 8 ID, Drain Current(A) 1 TA= 125C 25C -55 C 6 0.1 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, Gate to Source Voltage(V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage(V) Gate-Charge Characteristics -VGS, Gate-Source Voltage (V) 5 ID = -4A VDS= -5V Capacitance Characteristics 1400 1200 f = 1MHz VGS= 0 V 4 Capacitance(pF) -10V 1000 800 600 400 200 3 Ciss 2 1 Coss Crss 0 5 10 15 20 25 30 0 0 2 4 6 8 10 12 0 Qg Gate Charge(nC) -VDS, Drain to Source Voltage (V) Maxmum Safe Operating Area. 100 Single Pulse Maximum Power Dissipation. 50 ID,Drain Current(A) 10 RDS(ON) LIMIT 100ms 1s 10ms 100 s 1ms Power(W) 40 SINGLE PULSE R JA=100 C/W TA=25C 30 1 DC 20 0.1 VGS =-10V SINGLE PULSE R JA=100 C/W TA=25C 10 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 10 Single Pulse Time(SEC) 100 -VDS,Drain-Source Voltage(V) Transisent Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R R JA(t) JA=100 = r(t) * R C/W t1 t2 TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 100 300 t1 Time(SEC) |
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